8inch silicon wafer
Diameter: 200.0+/-0.2mm
Growth Method: CZ
Type/Dopant: P/Boron
Orientation: <100>+/-1°
Resistivity: 1-100ohm/cm
Thickness: 725+/-25um
TTV: <=10um
BOW/WARP: <=40um
Particle: <=50ea@>=0.2um
12inch silicon wafer
Item A-1
Diameter: 300.0+/-0.2mm
Growth Method: CZ
Type/Dopant: P/Boron
Orientation: <100>+/-1°
Notch Orientation: <110>+/-1°
Resistivity: 1-100ohm/cm
Thickness: ≧750um
TTV: <=10um
BOW/WARP: <=40um
Surface: DSP
LPD: <=50ea@>=0.2um
